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Senior sales engineer
Arminas Butkus +370 5 219 4884
Yb:YVO4 crystals
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Yb:YVO4 crystals

Main features

 

  • The simple electronic structure excludes excited-state absorption and also a variety of detrimental quenching processes
  • Broad and smooth emission spectrum
  • Low quantum defect
  • Custom crystals available upon request

 

Application examples

 

  • High power CW, Q-switched and mode-locked lasers
  • Thin-disk lasers
Request custom View stock
  • Description
  • Properties
  • Absorption and emission curves
  • Standard specifications

Yb3+:YVO4 crystal has a broad and smooth emission spectrum that allows wide wavelength tuning ranges and generating ultrashort pulses in mode-locked lasers. Due to good thermal conductivity Yb:YVO4 crystals can be used as an active medium in high-power thin-disk lasers.

Spectroscopic and thermo-mechanical properties
Absorption peak wavelength 985 nm
Absorption cross-section at peak 7,5 × 10-20 cm2
Absorption bandwidth at a peak wavelength 5 nm
Laser wavelength 1027 nm
Lifetime of 2F5/2 ytterbium energy level 250 μs
Emission cross-section @1027 nm 0,5 × 10-20 cm2
Refractive index @1064 nm n0=1,93, ne=2,1
Crystal structure Tetragonal
Density 4,22 g/cm3
Mohs hardness 5
Thermal conductivity ~5 Wm-1K-1
dn/dT 8,41 × 10-6 (//c) K-1, 15,5 × 10-6 ((//a) K-1
Thermal expansion coefficient 1,5 × 10-6 (//a) K-1, 8,2 × 10-6 (//c) K-1
Typical doping level 1-3 at.%

Yb:YVO4 crystals
Orientation a-cut
Clear aperture >90%
Face dimensions tolerance +0/-0,1 mm
Length tolerance ±0,1 mm
Parallelism error <10 arcsec
Perpendicularity error <10 arcmin
Protective chamfers <0,1 mm at 45˚
Surface quality 10-5 S-D
Surface flatness <λ/10@632,8 nm
Coatings AR(R<0,25%)@985 nm + AR(R<0,15%)
@1000-1070 nm on both faces
Laser induced damage threshold >10 J/cm2@1030 nm, 10 ns
Mount Unmounted
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Face dimensions Length End faces Orientation Doping Coatings SKU PRICE QUANTITY