Yb:YVO4 crystals
Main features
- The simple electronic structure excludes excited-state absorption and also a variety of detrimental quenching processes
- Broad and smooth emission spectrum
- Low quantum defect
- Custom crystals available upon request
Application examples
- High power CW, Q-switched and mode-locked lasers
- Thin-disk lasers
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- Description
- Properties
- Absorption and emission curves
- Standard specifications
Yb3+:YVO4 crystal has a broad and smooth emission spectrum that allows wide wavelength tuning ranges and generating ultrashort pulses in mode-locked lasers. Due to good thermal conductivity Yb:YVO4 crystals can be used as an active medium in high-power thin-disk lasers.
Spectroscopic and thermo-mechanical properties | |
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Absorption peak wavelength | 985 nm |
Absorption cross-section at peak | 7,5 × 10-20 cm2 |
Absorption bandwidth at a peak wavelength | 5 nm |
Laser wavelength | 1027 nm |
Lifetime of 2F5/2 ytterbium energy level | 250 μs |
Emission cross-section @1027 nm | 0,5 × 10-20 cm2 |
Refractive index @1064 nm | n0=1,93, ne=2,1 |
Crystal structure | Tetragonal |
Density | 4,22 g/cm3 |
Mohs hardness | 5 |
Thermal conductivity | ~5 Wm-1K-1 |
dn/dT | 8,41 × 10-6 (//c) K-1, 15,5 × 10-6 ((//a) K-1 |
Thermal expansion coefficient | 1,5 × 10-6 (//a) K-1, 8,2 × 10-6 (//c) K-1 |
Typical doping level | 1-3 at.% |
Yb:YVO4 crystals | |
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Orientation | a-cut |
Clear aperture | >90% |
Face dimensions tolerance | +0/-0,1 mm |
Length tolerance | ±0,1 mm |
Parallelism error | <10 arcsec |
Perpendicularity error | <10 arcmin |
Protective chamfers | <0,1 mm at 45˚ |
Surface quality | 10-5 S-D |
Surface flatness | <λ/10@632,8 nm |
Coatings | AR(R<0,25%)@985 nm + AR(R<0,15%) @1000-1070 nm on both faces |
Laser induced damage threshold | >10 J/cm2@1030 nm, 10 ns |
Mount | Unmounted |
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