Ti:Sapphire crystals «In Stock»
Titanium-doped sapphire (Ti3+:Al2O3) is a widely used transition-metal-doped laser crystal. Ti3+ ion has a very large gain bandwidth that opens the possibility to obtain very wide wavelength tunability realized in short-pulse lasers. To obtain crystals with good optical quality Ti3+ doping concentration should not exceed 0,25 at.%. Ti:Sapphire crystal is characterized by a short upper-state lifetime and a high saturation power. All these properties lead to the necessity of using a strongly focused pump beam.
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SPECIFICATION
SKU
PRICE
Qty. of stock
QUANTITY
⌀5 mm; 20 mm; C-axis parallel to E-vector of light beam; >95% of 532 nm >150; Right-angle cut; (+0,0/-0,1 mm); ±0,1 mm; >90%; 40-20 S-D; < λ/8; <λ/4 at 632,8 nm; <20 arcsec; < 0,2 mm at 45 deg; uncoated
14656
Request
1
6x6 mm; 6 mm; a-cut; 90-95% of 532 nm; Brewster cut; +0/-0,1 mm; ±0,1 mm; >90%; 10-5 S-D; <λ/10@632,8 nm; <λ/4@632,8 nm; <30 arcsec; <10 arcmin; <0,15 mm at 45˚; uncoated; uncoated
16274
Request
1
5779
Request
3
⌀6 mm; 20 mm; a-cut; 90-95% of 532 nm; >150; Brewster-angle cut; +0/-0,1 mm; ±0,1 mm; >90%; 10-5 S-D; <λ/10@632,8 nm; <λ/4 at 632,8 nm; <30 arcsec; <10 arcmin; <0,15 mm at 45˚; uncoated; uncoated
6641
1080 €
2
⌀12 mm; 15 mm; C-axis parallel to E-vector of light beam; 90-95% of 532 nm; >150; Right angle cut; +0,0/-0,1 mm; ±0,1 mm; >90%; 10-5 S-D; < λ/8; <λ/4 at 632,8 nm; <30 arcsec; AR(R<1%)@532 nm+AR (R< 0,3%)@750-850 nm AOI=0 deg+/-10 deg
7983
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