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Senior sales engineer
Arminas Butkus +370 5 219 4884
Tm, Ho:KYW crystals
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Tm, Ho:KYW crystals

Main features

 

  • Large and broad polarized absorption and emission bands
  • Efficient energy transfer Tm3+ → Ho3+
  • High dopant concentration with low concentration-quenching
  • Custom crystals available upon request

 

Application examples

 

  • 2 μm lasers for remote sensing (LIDAR technology), metrology and medical applications
  • Pump source of mid-IR optical parametric oscillators (OPOs)
Request custom
  • Description
  • Properties
  • Absorption and emission curves
  • Standard specifications

Ho3+ ions are characterized by higher emission cross-sections and longer upper laser level lifetimes compared to their Tm3+ counterparts. These features are desirable for a low-threshold and efficient laser operation. Ho3+ does not possess any strong absorption lines that are well matched to the outputs of commercially available laser diodes, therefore co-doping of Ho3+ with Tm3+ is chosen for an efficient operation across the 2 μm region through the energy transfer route from Tm3+ to Ho3+. Tm, Ho:KYW crystals are characterized by large and broad polarized absorption and emission bands, efficient energy transfer from Tm3+ to Ho3+.

Spectroscopic and thermo-mechanical properties
Absorption peak wavelength 802 nm
Absorption cross-section at peak 7,6 × 10-20 cm2
Absorption bandwidth at peak wavelength ~4 nm
Laser wavelength 2060 nm
Lifetime of 5I7 energy level 1,8 ms
Emission cross-section @2056 nm 4,7×10-20 cm2
Refractive index @1040nm ng=2,05, nm=2,01, np=1,97
Crystal structure Monoclinic
Density 6,5 g/cm3
Mohs hardness 4-5
Thermal conductivity ~3,3 Wm-1K-1
dn/dT dnm/dT= -9,2 × 10-6 K-1
Thermal expansion coefficient αp= 1,83 × 10-6 K-1, αm=10,29×10-6 K-1, αg= 15,94 × 10-6 K-1
Typical doping level 5 at.% [Tm]
0,5 at.% [Ho]

Tm, Ho:KYW crystals
Orientation Ng-cut
Clear aperture >90%
Face dimensions tolerance +0,0/-0,1 mm
Length tolerance ±0,1 mm
Parallelism error <10 arcsec
Perpendicularity error <10 arcmin
Protective chamfers <0,1 mm at 45˚
Surface quality 10-5 S-D
Surface flatness <λ/10@632,8 nm
Coatings AR(R<0,5%)@802 nm + AR(R<0,2%)@2000-2100 on both faces
LIDT >10 J/cm2@2060 nm, 10 ns
Mount Unmounted
Order your item
Face dimensions Length End faces Doping Coatings SKU PRICE QUANTITY
3x3 mm
2 mm
Right-angle cut
Tm 5%, Ho 0,5%
AR/AR@802 nm+2000-2100 nm
7855
Request
3x3 mm
2 mm
Brewster-angle cut
Tm 5%, Ho 0,5%
uncoated
7856
Request