Tm, Ho:KYW crystals
Main features
- Large and broad polarized absorption and emission bands
- Efficient energy transfer Tm3+ → Ho3+
- High dopant concentration with low concentration-quenching
- Custom crystals available upon request
Application examples
- 2 μm lasers for remote sensing (LIDAR technology), metrology and medical applications
- Pump source of mid-IR optical parametric oscillators (OPOs)
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- Description
- Properties
- Absorption and emission curves
- Standard specifications
Ho3+ ions are characterized by higher emission cross-sections and longer upper laser level lifetimes compared to their Tm3+ counterparts. These features are desirable for a low-threshold and efficient laser operation. Ho3+ does not possess any strong absorption lines that are well matched to the outputs of commercially available laser diodes, therefore co-doping of Ho3+ with Tm3+ is chosen for an efficient operation across the 2 μm region through the energy transfer route from Tm3+ to Ho3+. Tm, Ho:KYW crystals are characterized by large and broad polarized absorption and emission bands, efficient energy transfer from Tm3+ to Ho3+.
| Spectroscopic and thermo-mechanical properties | |
|---|---|
| Absorption peak wavelength | 802 nm |
| Absorption cross-section at peak | 7,6 × 10-20 cm2 |
| Absorption bandwidth at peak wavelength | ~4 nm |
| Laser wavelength | 2060 nm |
| Lifetime of 5I7 energy level | 1,8 ms |
| Emission cross-section @2056 nm | 4,7×10-20 cm2 |
| Refractive index @1040nm | ng=2,05, nm=2,01, np=1,97 |
| Crystal structure | Monoclinic |
| Density | 6,5 g/cm3 |
| Mohs hardness | 4-5 |
| Thermal conductivity | ~3,3 Wm-1K-1 |
| dn/dT | dnm/dT= -9,2 × 10-6 K-1 |
| Thermal expansion coefficient | αp= 1,83 × 10-6 K-1, αm=10,29×10-6 K-1, αg= 15,94 × 10-6 K-1 |
| Typical doping level | 5 at.% [Tm] 0,5 at.% [Ho] |
| Tm, Ho:KYW crystals | |
|---|---|
| Orientation | Ng-cut |
| Clear aperture | >90% |
| Face dimensions tolerance | +0,0/-0,1 mm |
| Length tolerance | ±0,1 mm |
| Parallelism error | <10 arcsec |
| Perpendicularity error | <10 arcmin |
| Protective chamfers | <0,1 mm at 45˚ |
| Surface quality | 10-5 S-D |
| Surface flatness | <λ/10@632,8 nm |
| Coatings | AR(R<0,5%)@802 nm + AR(R<0,2%)@2000-2100 on both faces |
| LIDT | >10 J/cm2@2060 nm, 10 ns |
| Mount | Unmounted |
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Face dimensions
Length
End faces
Doping
Coatings
SKU
PRICE
QUANTITY
3x3 mm
2 mm
Right-angle cut
Tm 5%, Ho 0,5%
AR/AR@802 nm+2000-2100 nm
7855
Request
3x3 mm
2 mm
Brewster-angle cut
Tm 5%, Ho 0,5%
uncoated
7856
Request
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